t4 - lds - 0016 , rev . 2 (111682) ?2011 microsemi corporation page 1 of 6 2n3506 thru 2n3507a available on commercial versions npn med ium power silicon transistor qualified per mil - prf - 19500/3 49 qualified levels : jan, jantx and jantxv description this family of 2n3506 through 2n3507a high - fr equency, epitaxial planar transistors feature low saturation voltage. these devices are also available in to -5 and low profile u4 packaging. microsemi also offers numerous other transistor products to meet higher and lower power ratings with various swit ching speed requirements in both through - hole and surface - mount packages. to - 39 (to - 205 ad) package also available in : to - 5 package ( long - leaded) 2n3506l C 2n3507al u4 pac kage (surface mount) 2n3506u4 C 2n3507au4 important: for the latest information, visit our website http://www.microsemi.com . features ? jedec registered 2n3 506 through 2n3 507a series. ? rohs compliant versions available (commercial grade only). ? v cr (sat) = 0.5 v @ i c = 500 ma . ? rise time t r = 30 n s max @ i c = 1.5 a, i b1 = 150 ma . ? fall time t f = 35 n s max @ i c = 1.5 a, i b1 = i b2 = 150 ma . applications / bene fits ? general purpose transistors for medium power applications requiring high frequency swit ching and low package profile. ? military and other high - reliability applications. maximum ratings msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters / test conditions symbol 2n3 506 2n3 507 unit collector - emitter voltage v ceo 40 50 v collec tor - base voltage v cbo 60 80 v emitter - base voltage v ebo 5.0 v thermal resistance junction - to - ambient r ? ja 175 o c/w thermal resistance junction - to - case r ? jc 18 o c/w collector current i c 3.0 a total power dissipation @ t a = +25 c (1) @ t c = + 110 c (2 ) p d 1 .0 5 .0 w operating & storage junction temperature range t j , t stg - 65 to +200 c notes : 1. derate linearly 5.7 1 mw/c for t a > +25 c. 2. derate linearly 55.5 mw/c for t c > + 110 c. downloaded from: http:///
t4 - lds - 0016 , rev . 2 (111682) ?2011 microsemi corporation page 2 of 6 2n3506 thru 2n3507a mechanical and packaging ? case: hermetically sealed, k ovar base, n ickel cap. ? terminals: leads are k ov ar, n ickel plated, and finish is solder dip (sn63/pb37). can be rohs compliant (commercial grade only) with pure matte - tin (commercial grade only) . ? marking: part number, d ate c ode, m anufacturers id. ? pola rity: npn (see package outline). ? weight: approximately 1.064 grams. ? see p ackage d imensions on last page. part nomenclature jan 2n3 506 a (e3) reliability level jan = jan level jantx = jantx level jantxv = ja ntxv level blank = commercial jedec type number (see electrical characteristic s table) rohs compliance e3 = rohs c ompliant ( available on commercial grade only ) blank = non - rohs c ompliant level improvement a = 2v gain specification @ - 55 c blank = 1v gain specification @ - 55 c symbols & definitions symbol definition c obo c ommon - base open - circuit output capacitance . i ceo c ollector cutoff current, base open . i cex c ollector cutoff current, circuit betwe en base and emitter . i ebo e mitter cutoff current, collector open . h fe c ommon - emitter static forward current transfer ratio . v ceo c ollector - emitter voltage, base open . v cbo c ollector - emitter voltage, emitter open . v ebo e mitter - base voltage, collector o pen . downloaded from: http:///
t4 - lds - 0016 , rev . 2 (111682) ?2011 microsemi corporation page 3 of 6 2n3506 thru 2n3507a electrical characteristics (t a = +25c, unless otherwise noted) off characteristics parameters / test conditions symbol min. max. unit collector - emitter breakdown voltage v (br)ceo 40 50 v i c = 10 ma 2n3506 2n3507 collector - emitter cutof f current i cex 1.0 1.0 a v ce = 40 v ; v eb = 4 v v ce = 60 v ; v eb = 4 v 2n3506 2n3507 collector - base breakdown voltage i c = 100 a 2n3506 2n3507 v (br)cbo 60 80 v emitter - base breakdown voltage i e = 10 a v (br)ebo 5 v on characteristics (1) pa rameters / test conditions symbol min. max. unit forward- current transfer ratio i c = 500 ma, v ce = 1 v 2n3506 2n3507 h fe 50 35 250 175 forward- current transfer ratio i c = 1.5 a, v ce = 2 v 2n3506 2n3507 h fe 40 30 200 150 forward- current transfer ratio i c = 2.5 a, v ce = 3 v 2n3506 2n3507 h fe 30 25 forward- current transfer ratio i c = 3.0 a, v ce = 5 v 2n3506 2n3507 h fe 25 20 forward- current transfer ratio i c = 500 ma, v ce = 1.0 v @ - 55 o c 2n3506 2n3507 h fe 25 17 forward- current transfer ratio i c = 500 ma, v ce = 2 .0 v @ - 55 o c 2n3506 a 2n3507 a h fe 25 17 collector - emitter saturation voltage i c = 500 ma, i b = 50 ma v ce(sat) 0.5 v collector - emitter saturation voltage i c = 1.5 a, i b = 150 ma v ce(sat) 1.0 v collector - emitter saturation voltage i c = 2.5 a, i b = 250 ma v ce(sat) 1.5 v base- emitter saturation voltage i c = 500 ma, i b = 50 ma v be(sat) 1.0 v base- emitter saturation voltage i c = 1.5 a, i b = 150 ma v be(sat) 0.8 1.3 v base- emitter saturation voltage i c = 2.5 a, i b = 250 ma v be(sa t) 2.0 v (1) pulse test: pulse width = 300 s, duty cycle 2.0%. downloaded from: http:///
t4 - lds - 0016 , rev . 2 (111682) ?2011 microsemi corporation page 4 of 6 2n3506 thru 2n3507a electrical characteristics (t a = +25c, unless otherwise noted) dynamic characteristics parameters / test conditions symbol min. max. unit magnitude of common emitter small - signa l short - circuit forward current transfer ratio i c = 100 ma, v ce = 5 v, f = 20 mhz |h fe | 3.0 15 output capacitance v cb = 10 v, i e = 0, 100 khz f 1.0 mhz c obo 40 pf input capacitance v eb = 3.0 v, i c = 0, 100 khz f 1.0 mhz c ibo 300 pf switching characteristics (2) parameters / test conditions symbol min. max. unit delay time i c = 1.5 a, i b1 = 150 ma t d 15 ns ri se time i c = 1.5 a, i b1 = 150 ma t r 30 ns storage time i c = 1.5 a, i b1 = i b2 = 150 ma t s 55 ns fall time i c = 1.5 a, i b1 = i b2 = 150 ma t f 35 ns (2 ) consult mil - prf - 19500/349 f or a dditional i nfornation. downloaded from: http:///
t4 - lds - 0016 , rev . 2 (111682) ?2011 microsemi corporation page 5 of 6 2n3506 thru 2n3507a graphs t c ( o c ) (case) figure 1 temperature - power derating curve note : thermal resistance junction to case = 18 .0 o c/w .1 10 -5 .1 10 -4 .1 10 -3 .1 10 -2 .1 10 -1 0 .1 1 10 100 time (s) figure 2 maximum thermal impedance (r ? jc ) dc operation maximum rating (w) theta ( o c /w) legend (top to bottom) v ce = 6 v v ce = 10 v v ce = 20 v v ce = 40 v v ce = 60 v downloaded from: http:///
t4 - lds - 0016 , rev . 2 (111682) ?2011 microsemi corporation page 6 of 6 2n3506 thru 2n3507a package dimensions notes: 1. dimension are in inches. 2. millimeters are given for general information only. 3. beyond r (radius) maximum, th shall be held for a minimum length of .011 (0.28 mm). 4. dimension tl measured from maximum hd. 5. body contour optional within zone defined by hd, cd, and q. 6. leads at gauge plane .054 +.001 - .000 inch (1.37 +0.03 - 0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (tp) at maximum material condition (mmc) relative to tab at mm c. 7. dimension lu applies between l1 and l2. dimension ld applies between l2 and ll minimum. diameter is uncontrolled in l1 and beyond ll minimum. 8. all three leads. 9. the collector shall be internally connected to the case. 10. dimension r (radius) applies to both inside corners of tab. 11 . d imension ll shall be .5 inches (12.7mm) minimum and .75 inches (19.0 mm) maximum. 12. in accordance with asme y14.5m, diameters are equivalent to x symbology. 13 . lead 1 = emitter, lead 2 = base, lead 3 = collector. dimensions symbol inches millimeters note min max min max cd 0.305 0.335 7.75 8.51 ch 0.240 0.260 6.10 6.60 hd 0.335 0.370 8.51 9.40 lc 0.200 tp 5.08 tp 6 ld 0.016 0.021 0.41 0.53 7, 8 ll see notes 7, 8, 1 1 lu 0.016 0.019 0.41 0.48 7, 8 l1 0.050 1.27 7, 8 l2 0.250 6.35 7, 8 p 0.100 2.54 5 q 0.050 1.27 4 tl 0.029 0.045 0.74 1.14 3 tw 0.028 0.034 0.71 0.86 2 r 0.010 0.25 10 45 tp 45 t p 6 downloaded from: http:///
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